| ‘lllvVISHAYDV www.viShay.com SS1 OPH9, SS1 OPH1 0 Vishay General Semiconductor RATINGS AND cHARAcTERIsTIcs cunvEs (TA = 25 0C unless othemise specified) 6 3 TL measured at the Cathode Average Fonuard Rectitied Current (A) a: 25 50 75 100 125 150 175 Lead Temperature (°C) Fig. 1 — Maximum Forward Current Derating Curve W) Average Power Loss ( 0 1 2 3 4 5 6 7 3 9 w H Average Fonlvard Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode 100 :3 v." j-”‘—AlIIIIIw’lv9nII'nI 0.1 Instantaneous Fonuard Current (A) 0.1 02 03 0.4 0.5 0.6 0.7 0.3 0.9 In Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Revision: 06-Nov-13 10 .0 0.01 0.001 0 0001 Instantaneous Reverse Current (mA) 0.00001 Percent of Rated Peak Reverse Voltage (%) Fig. A - Typical Reverse Characteristics Per Diode Junction Capacitance (pF) Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode Transient Thermal Impedance (°C/W) 3 t— Pulse Duratton (S) Fig. 6 - Typical Transient Thermal Impedance Per Diode Document N umber: 89000 For technical questions within your region: DicdesArnericas@vishay.corn, DiodesAsia@vishay.com, DiQdesEurope@vishay.com THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 |